AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (?= 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99%) target. The films were deposited using 7 J/cm2 laser fluence for 10 minutes on silicon (100) substrates. The working pressure was 9x10-3 mbar and the substrate temperature was varied from 200 C to 630 C. The thickness measured by profilometer was 150 nm for all films. Moreover, surface acoustic wave (SAW).